Electron migration in BaFCl:Eu2+ phosphors
文献类型：期刊论文
| 作者 | Chen W ; Song QQ ; Su MZ |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1997 |
| 卷号 | 81期号:7页码:3170-3174 |
| 关键词 | HOLE-PHOTOSTIMULATED LUMINESCENCE STORAGE PHOSPHOR COLOR-CENTERS V-CENTERS BAFBR-EU-2+ BAFBR RADIATION CRYSTALS |
| ISSN号 | 0021-8979 |
| 通讯作者 | chen w chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china. |
| 中文摘要 | here we report the electron migration by photo- or thermostimulation in bafcl:eu2+. electrons released from f centers may be trapped by other defect sites to form f aggregates or another type of f center and vice versa. this migration reduces the photostimulated luminescence efficiency, lowers the imaging plate sensitivity, and causes the difference between the optical absorption and photostimulation spectra of color centers. (c) 1997 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15247]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen W,Song QQ,Su MZ. Electron migration in BaFCl:Eu2+ phosphors[J]. journal of applied physics,1997,81(7):3170-3174. |
| APA | Chen W,Song QQ,&Su MZ.(1997).Electron migration in BaFCl:Eu2+ phosphors.journal of applied physics,81(7),3170-3174. |
| MLA | Chen W,et al."Electron migration in BaFCl:Eu2+ phosphors".journal of applied physics 81.7(1997):3170-3174. |
入库方式： OAI收割
来源：半导体研究所
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