Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field
文献类型：期刊论文
| 作者 | Sheng WD ; Xia JB |
| 刊名 | acta physica sinica-overseas edition
 |
| 出版日期 | 1996 |
| 卷号 | 5期号:9页码:700-704 |
| 关键词 | WAVE-GUIDE QUANTUM TRANSPORT FLUCTUATIONS RESISTANCE CONDUCTORS DEVICES |
| ISSN号 | 1004-423x |
| 通讯作者 | sheng wd acad sinica inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. |
| 中文摘要 | we have conducted numerical studies of ballistic electron transport in a semiconductor ii-structure when an external transverse electric field is applied. the device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding green's function formalism. the calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. when the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15251]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sheng WD,Xia JB. Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field[J]. acta physica sinica-overseas edition,1996,5(9):700-704. |
| APA | Sheng WD,&Xia JB.(1996).Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field.acta physica sinica-overseas edition,5(9),700-704. |
| MLA | Sheng WD,et al."Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field".acta physica sinica-overseas edition 5.9(1996):700-704. |
入库方式： OAI收割
来源：半导体研究所
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