中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field

文献类型:期刊论文

作者Sheng WD ; Xia JB
刊名acta physica sinica-overseas edition
出版日期1996
卷号5期号:9页码:700-704
关键词WAVE-GUIDE QUANTUM TRANSPORT FLUCTUATIONS RESISTANCE CONDUCTORS DEVICES
ISSN号1004-423x
通讯作者sheng wd acad sinica inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要we have conducted numerical studies of ballistic electron transport in a semiconductor ii-structure when an external transverse electric field is applied. the device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding green's function formalism. the calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. when the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15251]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Sheng WD,Xia JB. Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field[J]. acta physica sinica-overseas edition,1996,5(9):700-704.
APA Sheng WD,&Xia JB.(1996).Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field.acta physica sinica-overseas edition,5(9),700-704.
MLA Sheng WD,et al."Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field".acta physica sinica-overseas edition 5.9(1996):700-704.

入库方式: OAI收割

来源:半导体研究所

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