Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs
文献类型：期刊论文
| 作者 | Chen YH ; Yang Z ; Li RG ; Wang YQ ; Wang ZG |
| 刊名 | physical review b
 |
| 出版日期 | 1997 |
| 卷号 | 55期号:12页码:r7379-r7382 |
| ISSN号 | 0163-1829 |
| 关键词 | BEAM EPITAXIAL GAAS |
| 通讯作者 | chen yh hong kong univ sci & technoldept physkowloonhong kong. |
| 中文摘要 | the results of a reflectance-difference spectroscopy study of gaas grown on (100) gaas substrates by low-temperature molecular-beam epitaxy (lt-gaas) are presented. in-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. the rds line shape of the resonances clearly shows that the depletion region of lt-gaas is indeed extremely narrow (much less than 200 angstrom). the surface potential is obtained from the rds resonance amplitude without the knowledge of space-charge density. the change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the fermi level in lt-gaas. the fermi level still moves for samples annealed at above 600 degrees c, instead of being pinned to the as precipitates. this behavior can be explained by the dynamic properties of defects in the annealing process. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15255]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen YH,Yang Z,Li RG,et al. Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs[J]. physical review b,1997,55(12):r7379-r7382. |
| APA | Chen YH,Yang Z,Li RG,Wang YQ,&Wang ZG.(1997).Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs.physical review b,55(12),r7379-r7382. |
| MLA | Chen YH,et al."Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs".physical review b 55.12(1997):r7379-r7382. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。