Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)
文献类型：期刊论文
| 作者 | Giannini C ; Tapfer L ; Zhuang Y ; De Caro L ; Marschner T ; Stolz W |
| 刊名 | physical review b
 |
| 出版日期 | 1997 |
| 卷号 | 55期号:8页码:5276-5283 |
| ISSN号 | 0163-1829 |
| 关键词 | MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION SURFACE-MORPHOLOGY ROUGHNESS FILMS HETEROSTRUCTURES MULTILAYERS INGAAS |
| 通讯作者 | giannini c ctr nazl ric & sviluppo mat pastis cnrsm ss appia km 712 i-72100 brindisi italy. |
| 中文摘要 | in this work we investigate the structural properties of symmetrically strained (gain)as/gaas/ga(pas)/gaas superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. the multilayers were grown by metalorganic vapor-phase epitaxy on (001) gaas substrates intentionally off-oriented towards one of the nearest [110] directions. high-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. in this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, a semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. the same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15273]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Giannini C,Tapfer L,Zhuang Y,et al. Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)[J]. physical review b,1997,55(8):5276-5283. |
| APA | Giannini C,Tapfer L,Zhuang Y,De Caro L,Marschner T,&Stolz W.(1997).Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100).physical review b,55(8),5276-5283. |
| MLA | Giannini C,et al."Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)".physical review b 55.8(1997):5276-5283. |
入库方式： OAI收割
来源：半导体研究所
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