Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures
文献类型：期刊论文
| 作者 | Chen NF ; He HJ ; Wang YT ; Lin LY |
| 刊名 | science in china series a-mathematics physics astronomy
 |
| 出版日期 | 1997 |
| 卷号 | 40期号:2页码:214-218 |
| 关键词 | low temperature molecular beam epitaxy GaAs single crystal lattice parameter arsenic interstitial couples arsenic precipitates effects of backgating or sidegating LAYERS DEPENDENCE |
| ISSN号 | 1006-9283 |
| 通讯作者 | chen nf chinese acad sciinst semicondbeijing 100083peoples r china. |
| 中文摘要 | properties of gaas single crystals grown at low temperatures by molecular beam epitaxy (ltmbe gaas) have been studied. the results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in ltmbe gaas in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of ltmbe gaas, the arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees c. arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. the depletion regions caused by arsenic precipitates overlap each other in ltmbe gaas, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15281]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,He HJ,Wang YT,et al. Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures[J]. science in china series a-mathematics physics astronomy,1997,40(2):214-218. |
| APA | Chen NF,He HJ,Wang YT,&Lin LY.(1997).Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures.science in china series a-mathematics physics astronomy,40(2),214-218. |
| MLA | Chen NF,et al."Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures".science in china series a-mathematics physics astronomy 40.2(1997):214-218. |
入库方式： OAI收割
来源：半导体研究所
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