Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections
文献类型：期刊论文
| 作者 | Hao MS ; Wang YT ; Shao CL ; Soga TS ; Liang JW ; Jimbo T ; Umeno M |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 1996 |
| 卷号 | 35期号:12a页码:6017-6018 |
| ISSN号 | 0021-4922 |
| 关键词 | lattice constant misorientation X-ray reflection GaAs/Si epilayer SI |
| 通讯作者 | hao ms nagoya inst technoldept elect & comp engnshowa kugokiso chonagoyaaichi 466japan. |
| 中文摘要 | we improved the method previously used to determine the lattice constants and misorientation of gaas/si by recording the patterns of x-ray (004) and (220) reflections. the (220) reflection was measured from the (110) cross section of a gaas/si epilayer. the structural properties of the gaas/si epilayers grown by metal-organic chemical-vapor deposition (mocvd) using an ultrathin a-si buffer layer were investigated. the rotation angle of gaas/si epilayers grown by mocvd using an a-si buffer layer is very small and the lattice constants of these gaas/si epilayers agree quite well with elastic theory. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15285]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao MS,Wang YT,Shao CL,et al. Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,1996,35(12a):6017-6018. |
| APA | Hao MS.,Wang YT.,Shao CL.,Soga TS.,Liang JW.,...&Umeno M.(1996).Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections.japanese journal of applied physics part 1-regular papers short notes & review papers,35(12a),6017-6018. |
| MLA | Hao MS,et al."Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections".japanese journal of applied physics part 1-regular papers short notes & review papers 35.12a(1996):6017-6018. |
入库方式： OAI收割
来源：半导体研究所
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