中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+

文献类型:期刊论文

作者Chen W ; Su MZ
刊名applied physics letters
出版日期1997
卷号70期号:3页码:301-302
关键词BAFBR-EU-2+ PHOSPHORS CENTERS BAFCL-EU-2+ RADIATION BAFBR
ISSN号0003-6951
通讯作者chen w chinese acad sciinst semicondlab semicond mat scibeijing 100083peoples r china.
中文摘要in the photoluminescence (pl) of bafbr:eu2+,eu3+, the emissions of ea(2+), carrier electron-hole (e-h) recombination, and eu3+ are observed, while in the photostimulated luminescence (psl) only the emission of eu2+ is exhibited. this disappearance of e-h recombination in psl is considered to be caused by carrier migration during photo-stimulation. (c) 1997 american institute of physics.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15297]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen W,Su MZ. Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+[J]. applied physics letters,1997,70(3):301-302.
APA Chen W,&Su MZ.(1997).Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+.applied physics letters,70(3),301-302.
MLA Chen W,et al."Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+".applied physics letters 70.3(1997):301-302.

入库方式: OAI收割

来源:半导体研究所

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