Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+
文献类型:期刊论文
作者 | Chen W ; Su MZ |
刊名 | applied physics letters
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出版日期 | 1997 |
卷号 | 70期号:3页码:301-302 |
关键词 | BAFBR-EU-2+ PHOSPHORS CENTERS BAFCL-EU-2+ RADIATION BAFBR |
ISSN号 | 0003-6951 |
通讯作者 | chen w chinese acad sciinst semicondlab semicond mat scibeijing 100083peoples r china. |
中文摘要 | in the photoluminescence (pl) of bafbr:eu2+,eu3+, the emissions of ea(2+), carrier electron-hole (e-h) recombination, and eu3+ are observed, while in the photostimulated luminescence (psl) only the emission of eu2+ is exhibited. this disappearance of e-h recombination in psl is considered to be caused by carrier migration during photo-stimulation. (c) 1997 american institute of physics. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/15297] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chen W,Su MZ. Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+[J]. applied physics letters,1997,70(3):301-302. |
APA | Chen W,&Su MZ.(1997).Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+.applied physics letters,70(3),301-302. |
MLA | Chen W,et al."Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+".applied physics letters 70.3(1997):301-302. |
入库方式: OAI收割
来源:半导体研究所
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