Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
文献类型：期刊论文
| 作者 | Zhao DG(赵德刚); Zhang S(张爽); Liu WB(刘文宝); Hao XP(郝小鹏); Jiang DS(江德生); Zhu JJ(朱建军); Liu ZS(刘宗顺); Wang H(王辉) ; Zhang SM(张书明); Yang H(杨辉)
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| 刊名 | Chinese Physics B
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| 出版日期 | 2010 |
| 期号 | 5页码:571-574 |
| 关键词 | Ga vacancies MOCVD GaN Schottky barrier photodetector |
| 英文摘要 | The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated.It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density.It is also found that ... |
| 公开日期 | 2016-02-25 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/222781]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Zhao DG,Zhang S,Liu WB,et al. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors[J]. Chinese Physics B,2010(5):571-574. |
| APA | 赵德刚.,张爽.,刘文宝.,郝小鹏.,江德生.,...&魏龙.(2010).Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors.Chinese Physics B(5),571-574. |
| MLA | 赵德刚,et al."Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors".Chinese Physics B .5(2010):571-574. |
入库方式： OAI收割
来源：高能物理研究所
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