In situ electronic structural study of VO_2 thin film across the metal–insulator transition
文献类型：期刊论文
| 作者 | 伊明江·买买提; 阿布都艾则孜·阿布来提; Wu R(吴蕊) ; Wang JO(王嘉鸥); Qian HJ(钱海杰); 奎热西·依布拉欣
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| 刊名 | Chinese Physics B
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| 出版日期 | 2013 |
| 期号 | 12页码:414-419 |
| 关键词 | vanadium dioxide metal–insulator transition electronic structure photoemission spectroscopy |
| 通讯作者 | 奎热西 |
| 英文摘要 | The in situ valence band photoemission spectrum(PES) and X-ray absorption spectrum(XAS) at V LII LIIIedges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition(MIT) temperature(TMIT= 67°C). The spectra show evidence for changes in the... |
| 公开日期 | 2016-02-25 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223011]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | 伊明江·买买提,阿布都艾则孜·阿布来提,Wu R,et al. In situ electronic structural study of VO_2 thin film across the metal–insulator transition[J]. Chinese Physics B,2013(12):414-419. |
| APA | 伊明江·买买提,阿布都艾则孜·阿布来提,吴蕊,王嘉鸥,钱海杰,&奎热西·依布拉欣.(2013).In situ electronic structural study of VO_2 thin film across the metal–insulator transition.Chinese Physics B(12),414-419. |
| MLA | 伊明江·买买提,et al."In situ electronic structural study of VO_2 thin film across the metal–insulator transition".Chinese Physics B .12(2013):414-419. |
入库方式： OAI收割
来源：高能物理研究所
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