Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods
文献类型：期刊论文
| 作者 | An TL(安铁雷); Sun B(孙波); Wei TB(魏同波); Zhao LX(赵丽霞); Duan RF(段瑞飞); Liao YX(廖元勋); Li JM(李晋闽); Yi FT(伊福廷)
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| 刊名 | Journal of Semiconductors
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| 出版日期 | 2013 |
| 期号 | 11页码:53-56 |
| 关键词 | freestanding GaN flip chip LED CsCl wet etching light extraction |
| 英文摘要 | The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes(FSFCLEDs)using two-step roughening methods is investigated.The output power of LEDs fabricated by using one-step and two-step roughening methods are compared.The results indicate that two-step roughening metho... |
| 公开日期 | 2016-02-25 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223032]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | An TL,Sun B,Wei TB,et al. Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods[J]. Journal of Semiconductors,2013(11):53-56. |
| APA | 安铁雷.,孙波.,魏同波.,赵丽霞.,段瑞飞.,...&伊福廷.(2013).Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods.Journal of Semiconductors(11),53-56. |
| MLA | 安铁雷,et al."Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods".Journal of Semiconductors .11(2013):53-56. |
入库方式： OAI收割
来源：高能物理研究所
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