Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering
文献类型：期刊论文
| 作者 | Yang TY(杨铁莹); Qin XB(秦秀波) ; Wang HH(王焕华); Tieying Yang; Xiubo Qin; Huanhua Wang; Quanjie Jia; Runsheng Yu; Baoyi Wang; Jiaou Wang
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| 出版日期 | 2009 |
| 页码 | 6 |
| 关键词 | Ga-doped SnO_2 p-type transparent conducting oxide rf magnetron sputtering microstructure |
| 通讯作者 | 王焕华 |
| 英文摘要 | Transparent p-type conducting Ga-doped SnO_2 thin films were successfully prepared using reactive rf magnetron sputtering.The typical resistivity,hall mobility,hole concentrations and hall coefficient are 3.192×10~(-3)Ωcm,2.75×10~2 cm~2V~(-1)S~(-1),7.131×10~(18) cm~(-3),8.746×10~(-1)cm~3C~(-1), r... |
| 公开日期 | 2016-02-25 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/223248]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Yang TY,Qin XB,Wang HH,et al. Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering[J],2009:6. |
| APA | 杨铁莹.,秦秀波.,王焕华.,Tieying Yang.,Xiubo Qin.,...&姜晓明.(2009).Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering.,6. |
| MLA | 杨铁莹,et al."Preparation and microstructure of p-type transparent conducting Ga-doped SnO_2 thin films grown by rf magnetron sputtering".(2009):6. |
入库方式： OAI收割
来源：高能物理研究所
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