Two-dimensional excitonic emission in InAs submonolayers
文献类型：期刊论文
| 作者 | Yuan ZL ; Xu ZY ; Zheng BZ ; Xu JZ ; Li SS ; Ge WK ; Wang Y ; Wang J ; Chang LL ; Wang PD ; Torres CMS ; Ledentsov NN |
| 刊名 | physical review b
 |
| 出版日期 | 1996 |
| 卷号 | 54期号:23页码:16919-16924 |
| 关键词 | GAAS QUANTUM-WELLS OSCILLATOR STRENGTH RADIATIVE LIFETIMES LINEWIDTH DOTS PHOTOLUMINESCENCE RELAXATION DEPENDENCE HETEROSTRUCTURES LOCALIZATION |
| ISSN号 | 0163-1829 |
| 通讯作者 | yuan zl chinese acad sciinst semicondnatl lab superlattices & microstructpob 912beijing 100083peoples r china. |
| 中文摘要 | photoluminescence (pl) and time-resolved photoluminescence (trpl) were used to study optical emissions of ultrathin inas layers with average layer thickness ranging from 1/12 to 1 ml grown on gaas substrates. we have found that the inhomogeneous broadening of the pl from inas layers can be well described by the quantum-well model with inas islands coupling to each other and being regarded as a quasiwell. from the temperature dependence of the exciton linewidth, the exciton-lo-phonon scattering coefficient was found to be comparable to that in conventional two-dimensional quantum wells. in the trpl measurements, the pl decay time increases linearly with temperature, which is a typical characteristic of free excitons in quantum wells. all these results indicate that the excitons localized in inas exhibit two-dimensional properties of quantum wells, despite the topographical islandlike structure. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15305]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yuan ZL,Xu ZY,Zheng BZ,et al. Two-dimensional excitonic emission in InAs submonolayers[J]. physical review b,1996,54(23):16919-16924. |
| APA | Yuan ZL.,Xu ZY.,Zheng BZ.,Xu JZ.,Li SS.,...&Ledentsov NN.(1996).Two-dimensional excitonic emission in InAs submonolayers.physical review b,54(23),16919-16924. |
| MLA | Yuan ZL,et al."Two-dimensional excitonic emission in InAs submonolayers".physical review b 54.23(1996):16919-16924. |
入库方式： OAI收割
来源：半导体研究所
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