Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs
文献类型：期刊论文
| 作者 | Li GH ; Goni AR ; Syassen K ; Hou HQ ; Feng W ; Zhou JM |
| 刊名 | physica status solidi b-basic research
 |
| 出版日期 | 1996 |
| 卷号 | 198期号:1页码:329-335 |
| 关键词 | MULTIPLE QUANTUM-WELLS HYDROSTATIC-PRESSURE DEFORMATION POTENTIALS EXCITON ABSORPTION PHOTOLUMINESCENCE SPECTROSCOPY GAAS |
| ISSN号 | 0370-1972 |
| 中文摘要 | we have measured low-temperature photoluminescence (pl) and optical absorption spectra of an in0.2ga0.8as/gaas multiple quantum well (mqw) structure at pressures up to 8 gpa. below 4.9 gpa, pl shows only the emission of the n = 1 heavy-hole (hh) exciton. three new x-related pl bands appear at higher pressures. they are assigned to spatially indirect (type-ii) and direct (type-i) transitions from x(z) states in gaas and x(xy) valleys of ingaas, respectively, to the hh subband of the wells. from the pl data we obtain a valence band offset of 80 mev for the strained in0.2ga0.8as/gaas mqw system. absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. in the pressure range of 4.5 to 5.5 gpa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a hh subband and the folded x(z) states of the wells. this gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in mqws. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15319]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li GH,Goni AR,Syassen K,et al. Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs[J]. physica status solidi b-basic research,1996,198(1):329-335. |
| APA | Li GH,Goni AR,Syassen K,Hou HQ,Feng W,&Zhou JM.(1996).Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs.physica status solidi b-basic research,198(1),329-335. |
| MLA | Li GH,et al."Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs".physica status solidi b-basic research 198.1(1996):329-335. |
入库方式： OAI收割
来源：半导体研究所
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