High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Li GH ; Goni AR ; Syassen K ; Hou HQ ; Feng W ; Zhou JM |
| 刊名 | physical review b
 |
| 出版日期 | 1996 |
| 卷号 | 54期号:19页码:13820-13826 |
| 关键词 | HYDROSTATIC-PRESSURE EXCITON ABSORPTION DEFORMATION POTENTIALS LAYER SUPERLATTICES BAND OFFSET PHOTOLUMINESCENCE GAAS SPECTROSCOPY DEPENDENCE TEMPERATURE |
| ISSN号 | 0163-1829 |
| 通讯作者 | li gh max planck inst festkorperforschheisenbergstr 1d-70569 stuttgartgermany. |
| 中文摘要 | we have measured low-temperature photoluminescence (pl) and absorption spectra of in0.2ga0.8as/gaas multiple quantum wells (mqw's) under hydrostatic pressures up to 8 gpa. in pl, only a single peak is observed below 4.9 gpa corresponding to the n = 1 heavy-hole (hh) exciton in the inxga1-xas wells. above 4.9 gpa, new pl lines related to x-like conduction band states appear. they are assigned to the type-ii transition from the x(z) states in gaas to the hh subband of the inxga1-xas wells and to the zero-phonon line and lo-phonon replica of the type-i transition involving the x(xy) valleys of the wells. in addition to absorption peaks corresponding to direct exciton transitions in the wells, a new strong absorption feature is apparent in spectra for pressures between 4.5 and 5.5 gpa. this absorption is attributed to the pseudodirect transition between the hh subband and the x, state of the wells. this gives clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance in mqw structures. from experimental level splittings we determine the valence band offset and the shear deformation potential for x states in the in0.2ga0.8as layer. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15333]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li GH,Goni AR,Syassen K,et al. High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells[J]. physical review b,1996,54(19):13820-13826. |
| APA | Li GH,Goni AR,Syassen K,Hou HQ,Feng W,&Zhou JM.(1996).High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells.physical review b,54(19),13820-13826. |
| MLA | Li GH,et al."High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells".physical review b 54.19(1996):13820-13826. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。