X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis
文献类型：期刊论文
| 作者 | Wu MF ; Vantomme A ; Pattyn H ; Langouche G ; Yang QQ ; Wang QM |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1996 |
| 卷号 | 80期号:10页码:5713-5717 |
| 关键词 | EPITAXIAL ERBIUM SILICIDE RARE-EARTH SILICIDES DIFFUSION MARKER EXPERIMENTS THIN-FILMS 111 SI ELECTRICAL-PROPERTIES ATOMIC-STRUCTURE IMPLANTED SI YTTRIUM GROWTH |
| ISSN号 | 0021-8979 |
| 通讯作者 | wu mf beijing univdept tech physbeijing 100871peoples r china. |
| 中文摘要 | ersi1.7 layers with high crystalline quality (chi(min) of er is 1.5%) have been formed by 90 kev er ion implantation to a dose of 1.6x10(17)/cm(2) at 450 degrees c using channeled implantation. the perpendicular and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e(parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. the deduced tetragonal distortion e(t(xrd))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(t(rbs))2.14+/-0.17% deduced from the rutherford backscattering and channeling measurements. the quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15337]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu MF,Vantomme A,Pattyn H,et al. X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis[J]. journal of applied physics,1996,80(10):5713-5717. |
| APA | Wu MF,Vantomme A,Pattyn H,Langouche G,Yang QQ,&Wang QM.(1996).X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis.journal of applied physics,80(10),5713-5717. |
| MLA | Wu MF,et al."X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis".journal of applied physics 80.10(1996):5713-5717. |
入库方式： OAI收割
来源：半导体研究所
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