中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well

文献类型:期刊论文

作者Shao H ; Scholl S ; Schafer H ; Gerschutz J ; Jobst B ; Hommel D ; Landwehr G
刊名solid state communications
出版日期1996
卷号100期号:11页码:739-742
关键词quantum wells electronic transport BLUE-GREEN LASER OPTICAL-PROPERTIES DIODES TEMPERATURE ZNSE
ISSN号0038-1098
通讯作者shao h univ wurzburginst physd-97074 wurzburggermany.
中文摘要the magnetotransport properties of the two-dimensional (2d) electron gas confined in a modulation-doped zn0.80cd0.20se/zns0.06se0.94 single quantum well structure were studied at temperatures down to 0.35 k in magnetic fields up to 7.5 t. well resolved 2d shubnikovde haas (sdh) oscillations were observed, although the conductivity of the sample in the as grown state was dominated by a bulk parallel conduction layer. after removing most of the parallel conduction layer by wet chemical etching the amplitude and number of sdh oscillations increased. from the temperature dependence of the amplitude the effective mass of the electrons was estimated as 0.17 m(0). copyright (c) 1996 published by elsevier science ltd
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15339]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Shao H,Scholl S,Schafer H,et al. Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well[J]. solid state communications,1996,100(11):739-742.
APA Shao H.,Scholl S.,Schafer H.,Gerschutz J.,Jobst B.,...&Landwehr G.(1996).Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well.solid state communications,100(11),739-742.
MLA Shao H,et al."Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well".solid state communications 100.11(1996):739-742.

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来源:半导体研究所

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