Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well
文献类型:期刊论文
作者 | Shao H ; Scholl S ; Schafer H ; Gerschutz J ; Jobst B ; Hommel D ; Landwehr G |
刊名 | solid state communications
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出版日期 | 1996 |
卷号 | 100期号:11页码:739-742 |
关键词 | quantum wells electronic transport BLUE-GREEN LASER OPTICAL-PROPERTIES DIODES TEMPERATURE ZNSE |
ISSN号 | 0038-1098 |
通讯作者 | shao h univ wurzburginst physd-97074 wurzburggermany. |
中文摘要 | the magnetotransport properties of the two-dimensional (2d) electron gas confined in a modulation-doped zn0.80cd0.20se/zns0.06se0.94 single quantum well structure were studied at temperatures down to 0.35 k in magnetic fields up to 7.5 t. well resolved 2d shubnikovde haas (sdh) oscillations were observed, although the conductivity of the sample in the as grown state was dominated by a bulk parallel conduction layer. after removing most of the parallel conduction layer by wet chemical etching the amplitude and number of sdh oscillations increased. from the temperature dependence of the amplitude the effective mass of the electrons was estimated as 0.17 m(0). copyright (c) 1996 published by elsevier science ltd |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/15339] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Shao H,Scholl S,Schafer H,et al. Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well[J]. solid state communications,1996,100(11):739-742. |
APA | Shao H.,Scholl S.,Schafer H.,Gerschutz J.,Jobst B.,...&Landwehr G.(1996).Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well.solid state communications,100(11),739-742. |
MLA | Shao H,et al."Shubnikov de Haas oscillations of a two-dimensional electron gas in a modulation-doped Zn0.80Cd0.20Se/ZnS0.06Se0.94 single quantum well".solid state communications 100.11(1996):739-742. |
入库方式: OAI收割
来源:半导体研究所
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