Effective-mass theory for InAs/GaAs strained coupled quantum dots
文献类型：期刊论文
| 作者 | Li SS ; Xia JB ; Yuan ZL ; Xu ZY ; Ge WK ; Wang XR ; Wang Y ; Wang J ; Chang LL |
| 刊名 | physical review b
 |
| 出版日期 | 1996 |
| 卷号 | 54期号:16页码:11575-11581 |
| 关键词 | SELF-ORGANIZED GROWTH ISLAND FORMATION VALENCE BANDS BEAM EPITAXY GAAS MATRIX INAS PHOTOLUMINESCENCE HETEROSTRUCTURES MICROSTRUCTURES SUPERLATTICES |
| ISSN号 | 0163-1829 |
| 通讯作者 | li ss china ctr adv sci & technolworld labpob 8730beijing 100080peoples r china. |
| 中文摘要 | in the framework of effective-mass envelope-function theory, the optical transitions of inas/gaas strained coupled quantum dots grown on gaas (100) oriented substrates are studied. at the gamma point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. in calculations, the effects due to the different effective masses of electrons and holes in different materials are included. our theoretical results are in good agreement with the available experimental data. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15343]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SS,Xia JB,Yuan ZL,et al. Effective-mass theory for InAs/GaAs strained coupled quantum dots[J]. physical review b,1996,54(16):11575-11581. |
| APA | Li SS.,Xia JB.,Yuan ZL.,Xu ZY.,Ge WK.,...&Chang LL.(1996).Effective-mass theory for InAs/GaAs strained coupled quantum dots.physical review b,54(16),11575-11581. |
| MLA | Li SS,et al."Effective-mass theory for InAs/GaAs strained coupled quantum dots".physical review b 54.16(1996):11575-11581. |
入库方式： OAI收割
来源：半导体研究所
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