Photostimulated luminescence of BaFBr:Eu2+ phosphors
文献类型:期刊论文
作者 | Chen W ; Su MZ ; Song JQ ; Lin JH |
刊名 | journal of applied physics
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出版日期 | 1996 |
卷号 | 80期号:9页码:5309-5311 |
关键词 | CENTERS BAFCL-EU-2+ MECHANISM RADIATION |
ISSN号 | 0021-8979 |
通讯作者 | chen w chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china. |
中文摘要 | after x-irradiation for 10 s, luminescence from bafbr:eu2+ phosphors by photostimulation of longer wavelength than f absorption bands was observed and assigned to the surface states or intrinsic defects of the powders. it is found that the luminescence by photostimulation into f bands can be reduced via electron migration from f centers into the surface states or intrinsic defects, thus reducing the x-ray storage or image stability. surface passivation can lower these defects and improve the phosphors or imaging plate quality. (c) 1996 american institute of physics. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/15351] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chen W,Su MZ,Song JQ,et al. Photostimulated luminescence of BaFBr:Eu2+ phosphors[J]. journal of applied physics,1996,80(9):5309-5311. |
APA | Chen W,Su MZ,Song JQ,&Lin JH.(1996).Photostimulated luminescence of BaFBr:Eu2+ phosphors.journal of applied physics,80(9),5309-5311. |
MLA | Chen W,et al."Photostimulated luminescence of BaFBr:Eu2+ phosphors".journal of applied physics 80.9(1996):5309-5311. |
入库方式: OAI收割
来源:半导体研究所
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