中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photostimulated luminescence of BaFBr:Eu2+ phosphors

文献类型:期刊论文

作者Chen W ; Su MZ ; Song JQ ; Lin JH
刊名journal of applied physics
出版日期1996
卷号80期号:9页码:5309-5311
关键词CENTERS BAFCL-EU-2+ MECHANISM RADIATION
ISSN号0021-8979
通讯作者chen w chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china.
中文摘要after x-irradiation for 10 s, luminescence from bafbr:eu2+ phosphors by photostimulation of longer wavelength than f absorption bands was observed and assigned to the surface states or intrinsic defects of the powders. it is found that the luminescence by photostimulation into f bands can be reduced via electron migration from f centers into the surface states or intrinsic defects, thus reducing the x-ray storage or image stability. surface passivation can lower these defects and improve the phosphors or imaging plate quality. (c) 1996 american institute of physics.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15351]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen W,Su MZ,Song JQ,et al. Photostimulated luminescence of BaFBr:Eu2+ phosphors[J]. journal of applied physics,1996,80(9):5309-5311.
APA Chen W,Su MZ,Song JQ,&Lin JH.(1996).Photostimulated luminescence of BaFBr:Eu2+ phosphors.journal of applied physics,80(9),5309-5311.
MLA Chen W,et al."Photostimulated luminescence of BaFBr:Eu2+ phosphors".journal of applied physics 80.9(1996):5309-5311.

入库方式: OAI收割

来源:半导体研究所

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