Effects of point defects on lattice parameters of semiconductors
文献类型：期刊论文
| 作者 | Chen NF ; Wang YT ; He HJ ; Lin LY |
| 刊名 | physical review b
 |
| 出版日期 | 1996 |
| 卷号 | 54期号:12页码:8516-8521 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAAS SINGLE-CRYSTALS LOW-TEMPERATURE GAAS DOPED GAAS LAYERS CARBON DIFFRACTOMETER GROWTH SI |
| ISSN号 | 0163-1829 |
| 通讯作者 | chen nf chinese acad sciinst semicondsemicond mat sci labpob 912beijing 100083peoples r china. |
| 中文摘要 | a model for analyzing the correlation between lattice parameters and point defects in semiconductors has been established. the results of this model for analyzing the substitutes in semiconductors are in accordance with those from vegard's law and experiments. based on this model, the lattice strains caused by the antisites, the tetrahedral and octahedral single interstitials, and the interstitial couples are analyzed. the superdilation in lattice parameters of gaas grown at low temperatures by molecular-beam epitaxy can be interpreted by this model, which is in accordance with the experimental results. this model provides a way of analyzing the stoichiometry in bulk and epitaxial compound semiconductors nondestructively. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15353]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Wang YT,He HJ,et al. Effects of point defects on lattice parameters of semiconductors[J]. physical review b,1996,54(12):8516-8521. |
| APA | Chen NF,Wang YT,He HJ,&Lin LY.(1996).Effects of point defects on lattice parameters of semiconductors.physical review b,54(12),8516-8521. |
| MLA | Chen NF,et al."Effects of point defects on lattice parameters of semiconductors".physical review b 54.12(1996):8516-8521. |
入库方式： OAI收割
来源：半导体研究所
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