Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Chen NF ; Wang YT ; He HJ ; Lin LY |
| 刊名 | japanese journal of applied physics part 2-letters
 |
| 出版日期 | 1996 |
| 卷号 | 35期号:10a页码:l1238-l1240 |
| 关键词 | gallium arsenide low temperature As interstitials As interstitial couples molecular beam epitaxy X-ray rocking curve lattice parameter GALLIUM-ARSENIDE LAYERS DEPENDENCE |
| ISSN号 | 0021-4922 |
| 通讯作者 | chen nf chinese acad sciinst semicondpob 912beijing 100083peoples r china. |
| 中文摘要 | the structural properties of gaas grown at low temperatures by molecular beam epitaxy (ltmbe gaas) were studied. the excess arsenic atoms in ltmbe gaas exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of ltmbe gaas. annealing at above 300 degrees c, the arsenic interstitial couples decomposed, and as precipitates formed, resulting in a decrease in the lattice parameter. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15355]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Wang YT,He HJ,et al. Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy[J]. japanese journal of applied physics part 2-letters,1996,35(10a):l1238-l1240. |
| APA | Chen NF,Wang YT,He HJ,&Lin LY.(1996).Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy.japanese journal of applied physics part 2-letters,35(10a),l1238-l1240. |
| MLA | Chen NF,et al."Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy".japanese journal of applied physics part 2-letters 35.10a(1996):l1238-l1240. |
入库方式： OAI收割
来源：半导体研究所
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