Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
文献类型：期刊论文
| 作者 | Fan WJ ; Li MF ; Chong TC ; Xia JB |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1996 |
| 卷号 | 80期号:6页码:3471-3478 |
| 关键词 | GALLIUM NITRIDE ELECTRONIC-STRUCTURES SEMICONDUCTOR-LASERS ZINCBLENDE GAN PRESSURE PHOTOLUMINESCENCE SUPERLATTICES SUPPRESSION RESONANCE ALLOYS |
| ISSN号 | 0021-8979 |
| 通讯作者 | fan wj natl univ singaporedept elect engnctr optoelectr10 kent ridge crescentsingapore 119260singapore. |
| 中文摘要 | the valence hole subbands, te and tm mode optical gains, transparency carrier density, and radiative current density of the zinc-blende gan/ga0.85al0.15n strained quantum well (100 angstrom well width) have been investigated using a 6 x 6 hamiltonian model including the heavy hole, light hole, and spin-orbit split-off bands. at the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. the heavy hole does not couple with the light hole and the spin-orbit split-off hole. optical transitions between the valence subbands and the conduction subbands obey the delta n=0 selection rule. at the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. the optical transitions do not obey the delta n=0 selection rule. the compressive strain in the gan well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. consequently, the compressive strain enhances the te mode optical gain, and strongly depresses the tm mode optical gain. even when the carrier density is as large as 10(19) cm(-3), there is no positive tm mode optical gain. the te mode optical gain spectrum has a peak at around 3.26 ev. the transparency carrier density is 6.5 x 10(18) cm(-3), which is larger than that of gaas quantum well. the compressive strain overall reduces the transparency carrier density. the j(rad) is 0.53 ka/cm(2) for the zero optical gain. the results obtained in this work will be useful in designing quantum well gan laser diodes and detectors. (c) 1996 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15369]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fan WJ,Li MF,Chong TC,et al. Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells[J]. journal of applied physics,1996,80(6):3471-3478. |
| APA | Fan WJ,Li MF,Chong TC,&Xia JB.(1996).Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells.journal of applied physics,80(6),3471-3478. |
| MLA | Fan WJ,et al."Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells".journal of applied physics 80.6(1996):3471-3478. |
入库方式： OAI收割
来源：半导体研究所
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