Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature
文献类型：期刊论文
| 作者 | Sheng SR ; Kong GL ; Liao XB |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1996 |
| 卷号 | 80期号:6页码:3607-3609 |
| 关键词 | A-SI-H LIGHT PHOTOCONDUCTIVITY |
| ISSN号 | 0021-8979 |
| 通讯作者 | sheng sr chinese acad sciinst semicondbeijing 100083peoples r china. |
| 中文摘要 | the intermittent illumination treatment by white light at elevated temperature is proved to be a convenient and efficient method for the improvement of the stability of hydrogenated amorphous silicon (a-si:h) films. the effect of the treatment on electrical properties, light-induced degradation, and gap states of undoped a-si:h films has been investigated in detail. with the increase of cycling number, the dark- as well as photo-conductivities in annealed state and light-soaked state approach each other, presenting an unique irreversible effect. the stabilization and ordering processes by the present treatment can not be achieved merely by annealing under the same conditions. it is shown that the treatment proposed here results in a shift to higher values of the energy barriers between defects and their precursors, and hence an improved stability of a-si:h films. (c) 1996 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15371]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sheng SR,Kong GL,Liao XB. Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature[J]. journal of applied physics,1996,80(6):3607-3609. |
| APA | Sheng SR,Kong GL,&Liao XB.(1996).Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature.journal of applied physics,80(6),3607-3609. |
| MLA | Sheng SR,et al."Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature".journal of applied physics 80.6(1996):3607-3609. |
入库方式： OAI收割
来源：半导体研究所
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