Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer
文献类型：期刊论文
| 作者 | Hao MS ; Shao CL ; Soga T ; Jimbo T ; Umeno M ; Liang JW ; Zheng LX ; Xiao ZB ; Xiao JF |
| 刊名 | japanese journal of applied physics part 2-letters
 |
| 出版日期 | 1996 |
| 卷号 | 35期号:8a页码:l960-l963 |
| 关键词 | GaAs/Si epilayer a-Si buffer layer deep level MOCVD DISLOCATION DENSITY |
| ISSN号 | 0021-4922 |
| 通讯作者 | hao ms nagoya inst technoldept elect & comp engnshowa kugokiso chonagoyaaichi 466japan. |
| 中文摘要 | gaas epilayers grown on si by metalorganic chemical vapor deposition (mocvd) using an ultrathin a-si buffer layer were characterized by deep-level transient spectroscopy (dlts). six electron traps with activation energies of 0.79, 0.67, 0.61, 0.55, 0.53 and 0.32 ev below the conduction band were determined by fitting the experimental spectra. two of the levels, c (0.61 ev) and f (0.32 ev), were first detected in gaas epilayers on si and identified as the metastable defects m3 and m4, respectively. in order to improve the quality of gaas/si epilayers, another gaas layer was grown on the gaas/si epilayers grown using mocvd. the deep levels in this regrown gaas epilayer were also studied using dlts. only the el2 level was found in the regrown gaas epilayers. these results show that the quality of the gaas epilayer was greatly improved by applying this growth process. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15375]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao MS,Shao CL,Soga T,et al. Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer[J]. japanese journal of applied physics part 2-letters,1996,35(8a):l960-l963. |
| APA | Hao MS.,Shao CL.,Soga T.,Jimbo T.,Umeno M.,...&Xiao JF.(1996).Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer.japanese journal of applied physics part 2-letters,35(8a),l960-l963. |
| MLA | Hao MS,et al."Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer".japanese journal of applied physics part 2-letters 35.8a(1996):l960-l963. |
入库方式： OAI收割
来源：半导体研究所
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