Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations
文献类型：期刊论文
| 作者 | Li Z ; Li CJ ; Eremin V ; Verbitskaya E |
| 刊名 | nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment
 |
| 出版日期 | 1996 |
| 卷号 | 377期号:0页码:265-275 |
| 关键词 | RADIATION-DAMAGE RESISTIVITY |
| ISSN号 | 0168-9002 |
| 通讯作者 | li z brookhaven natl labuptonny 11973. |
| 中文摘要 | neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (tsc) and current deep level transient spectroscopy (i-dlts). these studies have been correlated to the traditional c-v, i-v, and transient current and charge techniques (tct/tcht) after neutron radiation and subsequent thermal anneals. it has been found that the increases of the space charge density, n-eff, in irradiated detectors after thermal anneals (n-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. in particular, increases of the double vacancy center (v-v and v-v-- -) and/or c-i-o-i level have good correlations with the n-eff reverse anneal. it has also been observed that the leakage current of highly irradiated (phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (phi(n) < 10(13) n/cm(2)) detectors. it is apparent that v-v center and/or c-i-o-i level play important roles in both n-eff and leakage current degradations for highly irradiated high resistivity silicon detectors. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15389]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li Z,Li CJ,Eremin V,et al. Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations[J]. nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment,1996,377(0):265-275. |
| APA | Li Z,Li CJ,Eremin V,&Verbitskaya E.(1996).Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations.nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment,377(0),265-275. |
| MLA | Li Z,et al."Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations".nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment 377.0(1996):265-275. |
入库方式： OAI收割
来源：半导体研究所
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