Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices
文献类型：期刊论文
| 作者 | Cheng WC ; Xia JB ; Xu SJ ; Zheng HZ ; Luo KJ ; Zhang PH ; Yang XP |
| 刊名 | acta physica sinica-overseas edition
 |
| 出版日期 | 1996 |
| 卷号 | 5期号:6页码:463-469 |
| 关键词 | QUANTUM-WELLS BAND-GAP |
| ISSN号 | 1004-423x |
| 通讯作者 | cheng wc acad sinicainst semicondstate key lab superlattices & microstructpob 912beijing 100083peoples r china. |
| 中文摘要 | radiative transition in delta-doped gaas superlattices with and without al0.1ga0.9as barriers is investigated by using photoluminescence at low temperatures. the experimental results show that the transition mechanism of delta-doped superlattices is very different from that of ordinary superlattices. emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. by using this model we can explain the main optical characteristics measured. moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15393]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cheng WC,Xia JB,Xu SJ,et al. Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices[J]. acta physica sinica-overseas edition,1996,5(6):463-469. |
| APA | Cheng WC.,Xia JB.,Xu SJ.,Zheng HZ.,Luo KJ.,...&Yang XP.(1996).Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices.acta physica sinica-overseas edition,5(6),463-469. |
| MLA | Cheng WC,et al."Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices".acta physica sinica-overseas edition 5.6(1996):463-469. |
入库方式： OAI收割
来源：半导体研究所
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