中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

文献类型:期刊论文

作者Liu Y ; Xiao XR ; Wang RZ ; Li DL ; Zeng YP ; Yang CH ; Sun DZ
刊名chemical physics letters
出版日期1996
卷号256期号:3页码:312-316
关键词ELECTROREFLECTANCE SPECTRA PHOTOCURRENT SPECTROSCOPY LINE-SHAPE BAND-GAP PHOTOREFLECTANCE MODEL ELECTRODES DEPENDENCE CELLS
ISSN号0009-2614
中文摘要the interfacial behavior of the single quantum well (sqw) gaas/alxga1-xas electrode in hq/bq and fc/fc(+) electrolytes was characterized respectively by studying the quantum confined stark effect and franz-keldysh oscillation with electrolyte electroreflectance spectroscopy. the interaction of the surface state of the sqw electrode with redox species and its effects on the distribution of external bias at the interface of the sqw electrode are discussed.
学科主题半导体化学
收录类别SCI
语种英语
公开日期2010-11-17
源URL[http://ir.semi.ac.cn/handle/172111/15403]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu Y,Xiao XR,Wang RZ,et al. EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface[J]. chemical physics letters,1996,256(3):312-316.
APA Liu Y.,Xiao XR.,Wang RZ.,Li DL.,Zeng YP.,...&Sun DZ.(1996).EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface.chemical physics letters,256(3),312-316.
MLA Liu Y,et al."EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface".chemical physics letters 256.3(1996):312-316.

入库方式: OAI收割

来源:半导体研究所

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