Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation
文献类型：期刊论文
| 作者 | Sai N ; Zheng BZ ; Xu JZ ; Zhang PH ; Yang XP ; Xu ZY |
| 刊名 | solid state communications
 |
| 出版日期 | 1996 |
| 卷号 | 98期号:12页码:1039-1042 |
| 关键词 | quantum wells intermixing photoluminescence INTERDIFFUSION WIRES |
| ISSN号 | 0038-1098 |
| 通讯作者 | sai n acad sinicainst semicondnatl lab superlatices & microstructpob 912beijing 100083peoples r china. |
| 中文摘要 | ga(+)ion implantation followed by rapid thermal annealing (rta) was used to enhance the interdiffusion in gaas/algaas single quantum wells(sqws). the extent of intermixing was found to be dependent on the well depth, number of implanted ions and annealing time. a very fast interdiffusion process occurs at the initial annealing stage. after that, the enhanced diffusion coefficient goes back to the umimplanted value. we propose a two-step model to explain the diffusion process as a function of the annealing time : a fast diffusion process and a saturated diffusion process. the interdiffusion coefficient of the fast diffusion was found to be of well depth dependence and estimated to be in the range of 5.4x10(-16) similar to 1.5x10(-15)cm(2)s(-1). copyright (c) 1996 published by elsevier science ltd |
| 英文摘要 | ga(+)ion implantation followed by rapid thermal annealing (rta) was used to enhance the interdiffusion in gaas/algaas single quantum wells(sqws). the extent of intermixing was found to be dependent on the well depth, number of implanted ions and annealing time. a very fast interdiffusion process occurs at the initial annealing stage. after that, the enhanced diffusion coefficient goes back to the umimplanted value. we propose a two-step model to explain the diffusion process as a function of the annealing time : a fast diffusion process and a saturated diffusion process. the interdiffusion coefficient of the fast diffusion was found to be of well depth dependence and estimated to be in the range of 5.4x10(-16) similar to 1.5x10(-15)cm(2)s(-1). copyright (c) 1996 published by elsevier science ltd; 于2010-11-17批量导入; zhangdi于2010-11-17 14:16:45导入数据到semi-ir的ir; made available in dspace on 2010-11-17t06:16:45z (gmt). no. of bitstreams: 1 7037.pdf: 399785 bytes, checksum: 37fe56da550a88a5c71885c46a90668d (md5) previous issue date: 1996; institute of semiconductors,cas |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15405]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sai N,Zheng BZ,Xu JZ,et al. Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation[J]. solid state communications,1996,98(12):1039-1042. |
| APA | Sai N,Zheng BZ,Xu JZ,Zhang PH,Yang XP,&Xu ZY.(1996).Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation.solid state communications,98(12),1039-1042. |
| MLA | Sai N,et al."Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation".solid state communications 98.12(1996):1039-1042. |
入库方式： OAI收割
来源：半导体研究所
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