Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)
文献类型：期刊论文
| 作者 | Li Z ; Ghislotti G ; Kraner HW ; Li CJ ; Nielsen B ; Feick H ; Lindstroem G |
| 刊名 | ieee transactions on nuclear science
 |
| 出版日期 | 1996 |
| 卷号 | 43期号:3页码:1590-1598 |
| 关键词 | RADIATION-DAMAGE JUNCTION |
| ISSN号 | 0018-9499 |
| 通讯作者 | li z brookhaven natl labuptonny 11973. |
| 中文摘要 | current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (i-dlts) and thermally stimulated current (tsc), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (vhfn) irradiation (1.7x10(15) n/cm(2)). as many as fourteen deep levels have been detected by i-dlts. arrhenius plots of the i-dlts data have shown defects with energy levels ranging from 0.03 ev to 0.5 ev in the energy band gap. defect concentrations of relatively shallow levels (e(t) < 0.33 ev) are in the order of 10(13)cm(-3), while those for relatively deep levels (e(t) > 0.33 ev) are in the order of 10(14) cm(-3). tsc data have shown similar defect spectra. a full depletion voltage of about 27,000 volts has been estimated by c-v measurements for the as-irradiated detector, which corresponds to an effective space charge density (n-eff) in the order of 2x10(14) cm(-3). both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (eta). the increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 ev level. results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with eta, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15409]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li Z,Ghislotti G,Kraner HW,et al. Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)[J]. ieee transactions on nuclear science,1996,43(3):1590-1598. |
| APA | Li Z.,Ghislotti G.,Kraner HW.,Li CJ.,Nielsen B.,...&Lindstroem G.(1996).Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2).ieee transactions on nuclear science,43(3),1590-1598. |
| MLA | Li Z,et al."Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)".ieee transactions on nuclear science 43.3(1996):1590-1598. |
入库方式： OAI收割
来源：半导体研究所
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