Formation of Fe-N films containing Fe6N2 phase by ion beam assisted deposition
文献类型：期刊论文
| 作者 | Jiang H ; Yao Z ; Huang D ; Qin F ; Liu Z ; Tao K ; Li H |
| 刊名 | thin solid films
 |
| 出版日期 | 1996 |
| 卷号 | 274期号:0页码:63-65 |
| 关键词 | ion implantation magnesium nitrides plasma processing and deposition NITROGEN-IMPLANTATION IRON FILMS FE16N2 |
| ISSN号 | 0040-6090 |
| 通讯作者 | jiang h chinese acad sciinst semicondbeijing 100083peoples r china. |
| 中文摘要 | fe-n films were deposited on si(100) and gaas(100) substrates at room temperature by ion beam assisted deposition under various n/ fe atomic arrival ratio, 0.09, 0.12, 0.15. the results of x-ray diffraction indicated that the film deposited at 0.12 of n/fe arrival ratio contained a considerable fraction of the fe16n2 phase which had grown predominantly in the [001] orientation. for the larger n/fe arrival ratio, a martensite phase with 15 at.% nitrogen was obtained. it was found that a lower deposition temperature (<200 degrees c) was necessary for the formation of the fe16n2 phase. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15413]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang H,Yao Z,Huang D,et al. Formation of Fe-N films containing Fe6N2 phase by ion beam assisted deposition[J]. thin solid films,1996,274(0):63-65. |
| APA | Jiang H.,Yao Z.,Huang D.,Qin F.,Liu Z.,...&Li H.(1996).Formation of Fe-N films containing Fe6N2 phase by ion beam assisted deposition.thin solid films,274(0),63-65. |
| MLA | Jiang H,et al."Formation of Fe-N films containing Fe6N2 phase by ion beam assisted deposition".thin solid films 274.0(1996):63-65. |
入库方式： OAI收割
来源：半导体研究所
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