Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure
文献类型：期刊论文
| 作者 | Dong JR ; Wang ZG ; Lu DC ; Liu XL ; Li XB ; Sun DZ ; Wang ZJ ; Kong MY ; Li GH |
| 刊名 | applied physics letters
 |
| 出版日期 | 1996 |
| 卷号 | 68期号:12页码:1711-1713 |
| 关键词 | VAPOR-PHASE EPITAXY GA0.5IN0.5P DEPENDENCE SPECTRUM ENERGY GROWTH |
| ISSN号 | 0003-6951 |
| 通讯作者 | dong jr chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china. |
| 中文摘要 | photoluminescence of gainp epilayers under hydrostatic pressure is investigated. the gamma valley of disordered gainp shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear dependence of lattice constant on the hydrostatic pressure. the gamma valleys of ordered gainp epilayers rise slower than that of the disordered one. considering the interactions between the gamma valley and folded l and x valleys, the pressure dependence of the band gap of ordered gainp is calculated and fitted. the results demonstrate that not only ordering along [111] directions but also sometimes simultaneous ordering along [111] and [100] directions can occur in ordered gainp. (c) 1996 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15441]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dong JR,Wang ZG,Lu DC,et al. Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure[J]. applied physics letters,1996,68(12):1711-1713. |
| APA | Dong JR.,Wang ZG.,Lu DC.,Liu XL.,Li XB.,...&Li GH.(1996).Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure.applied physics letters,68(12),1711-1713. |
| MLA | Dong JR,et al."Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure".applied physics letters 68.12(1996):1711-1713. |
入库方式： OAI收割
来源：半导体研究所
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