Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case
文献类型：期刊论文
| 作者 | Xu SJ ; Liu J ; Zheng HZ ; Chua SJ ; Li YX ; Cheng WC ; Zhang PH ; Yang XP |
| 刊名 | physics letters a
 |
| 出版日期 | 1996 |
| 卷号 | 212期号:0页码:97-102 |
| 关键词 | NEGATIVE DIFFERENTIAL CONDUCTIVITY SEMICONDUCTOR SUPERLATTICES ELECTRICAL TRANSPORT LOCALIZATION CONDUCTANCE |
| ISSN号 | 0375-9601 |
| 通讯作者 | xu sj natl univ singaporedept elect engnctr optoelect10 kent ridge crescentsingapore 0511singapore. |
| 中文摘要 | perpendicular transport in a specially designed, doped and weakly coupled gaas/alas superlattice is investigated. a linear current-voltage at a bias within +/-10 mv and a negative differential velocity effect at a bias of about +/-40 mv are observed at low temperatures. the miniband conductance near zero electric field is studied as a function of temperature. it is found that the measured conductance increases slightly as the temperature increases to about 30 k, decreases as the temperature rises from 30 k to 70 k, and then increases strongly above 70 k, indicating the existence of a mobility gap. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15443]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu SJ,Liu J,Zheng HZ,et al. Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case[J]. physics letters a,1996,212(0):97-102. |
| APA | Xu SJ.,Liu J.,Zheng HZ.,Chua SJ.,Li YX.,...&Yang XP.(1996).Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case.physics letters a,212(0),97-102. |
| MLA | Xu SJ,et al."Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case".physics letters a 212.0(1996):97-102. |
入库方式： OAI收割
来源：半导体研究所
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