Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption
文献类型：期刊论文
| 作者 | Yuan ZL ; Xu ZY ; Zheng BZ ; Luo CP ; Xu JZ ; Ge WK ; Zhang PH ; Yang XP |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1996 |
| 卷号 | 79期号:2页码:1073-1077 |
| 关键词 | MOLECULAR-BEAM EPITAXY MONOLAYER-FLAT ISLANDS SEMICONDUCTOR INTERFACES EXCITON TRANSFER TEMPERATURE LINEWIDTH DYNAMICS |
| ISSN号 | 0021-8979 |
| 通讯作者 | yuan zl chinese acad sciinst semicondnlsmpob 912beijing 100083peoples r china. |
| 中文摘要 | photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in gaas/algaas quantum wells grown by molecular-beam epitaxy with growth interruption. photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the ''atomically smooth island'' picture. by analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. the lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. our results strongly support the bimodal roughness model proposed by warwick et al. [appl. phys. lett. 56, 2666 (1990)]. (c) 1996 american institute of physics. |
| 英文摘要 | photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in gaas/algaas quantum wells grown by molecular-beam epitaxy with growth interruption. photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the ''atomically smooth island'' picture. by analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. the lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. our results strongly support the bimodal roughness model proposed by warwick et al. [appl. phys. lett. 56, 2666 (1990)]. (c) 1996 american institute of physics.; 于2010-11-17批量导入; zhangdi于2010-11-17 14:16:59导入数据到semi-ir的ir; made available in dspace on 2010-11-17t06:16:59z (gmt). no. of bitstreams: 1 7062.pdf: 98072 bytes, checksum: 7f18cf6abba966dce2b2956b8d124a8b (md5) previous issue date: 1996; hong kong univ sci & technol,dept phys,kowloon,hong kong |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15455]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yuan ZL,Xu ZY,Zheng BZ,et al. Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption[J]. journal of applied physics,1996,79(2):1073-1077. |
| APA | Yuan ZL.,Xu ZY.,Zheng BZ.,Luo CP.,Xu JZ.,...&Yang XP.(1996).Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption.journal of applied physics,79(2),1073-1077. |
| MLA | Yuan ZL,et al."Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption".journal of applied physics 79.2(1996):1073-1077. |
入库方式： OAI收割
来源：半导体研究所
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