Analysis of Dopant distributions in LEC-InP
文献类型：期刊论文
| 作者 | Wei J |
| 刊名 | crystal research and technology
 |
| 出版日期 | 1995 |
| 卷号 | 30期号:8页码:1169-1178 |
| 关键词 | DIFFUSION GROWTH ZN |
| ISSN号 | 0232-1300 |
| 通讯作者 | wei j chinese acad sciinst semicondbeijing 100083peoples r china. |
| 中文摘要 | it is often important to be able to estimate the concentration of dopant atoms incorporated into inp crystals grown from inp melt of given composition. in this paper we present a simple parameter (g) to revise the commonly used effective distribution coefficient (k(eff)) and the scheil equation. the results obtained for various dopants and different initial concentrations in lec-grown inp ingots are discussed. it is shown that the revised dopant concentration curves tally with the real distributions. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15461]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei J. Analysis of Dopant distributions in LEC-InP[J]. crystal research and technology,1995,30(8):1169-1178. |
| APA | Wei J.(1995).Analysis of Dopant distributions in LEC-InP.crystal research and technology,30(8),1169-1178. |
| MLA | Wei J."Analysis of Dopant distributions in LEC-InP".crystal research and technology 30.8(1995):1169-1178. |
入库方式： OAI收割
来源：半导体研究所
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