Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
文献类型：期刊论文
| 作者 | Fan WJ ; Li MF ; Chong TC ; Xia JB |
| 刊名 | solid state communications
 |
| 出版日期 | 1996 |
| 卷号 | 97期号:5页码:381-384 |
| 关键词 | semiconductors electronic band structure PSEUDOPOTENTIAL CALCULATIONS ELECTRONIC-STRUCTURE GALLIUM NITRIDE SEMICONDUCTORS DIAMOND |
| ISSN号 | 0038-1098 |
| 通讯作者 | fan wj natl univ singaporedept elect engnctr optoelectr10 kent ridge crescentsingapore 0511singapore. |
| 中文摘要 | the electronic properties of wide energy gap zinc-blende structure gan, aln and their alloys ga1-xalxn are investigated using the empirical pseudopotential method. electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at gamma and those of the conduction band at gamma and x are obtained. the energies of gamma, x, l conduction valleys of ga1-xalxn alloy versus al fraction x are also calculated. the information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range. |
| 英文摘要 | the electronic properties of wide energy gap zinc-blende structure gan, aln and their alloys ga1-xalxn are investigated using the empirical pseudopotential method. electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at gamma and those of the conduction band at gamma and x are obtained. the energies of gamma, x, l conduction valleys of ga1-xalxn alloy versus al fraction x are also calculated. the information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.; 于2010-11-17批量导入; zhangdi于2010-11-17 14:17:02导入数据到semi-ir的ir; made available in dspace on 2010-11-17t06:17:02z (gmt). no. of bitstreams: 1 7070.pdf: 372988 bytes, checksum: 7c639c357c7bc3f3e1a89a8e330f82d7 (md5) previous issue date: 1996; acad sinica,inst semicond,natl lab superlattices microstruct,beijing 100083,peoples r china |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15471]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fan WJ,Li MF,Chong TC,et al. Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN[J]. solid state communications,1996,97(5):381-384. |
| APA | Fan WJ,Li MF,Chong TC,&Xia JB.(1996).Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN.solid state communications,97(5),381-384. |
| MLA | Fan WJ,et al."Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN".solid state communications 97.5(1996):381-384. |
入库方式： OAI收割
来源：半导体研究所
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