GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS
文献类型：期刊论文
| 作者 | LUO CP ; CHIN MK ; YUAN Z ; XU ZY ; YANG XP ; ZHANG PH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1995 |
| 卷号 | 155期号:0页码:272-275 |
| 关键词 | SEMICONDUCTOR INTERFACES ROUGHNESS SCATTERING |
| ISSN号 | 0022-0248 |
| 通讯作者 | luo cp nanyang technol univsch elect & electr engnnanyang avesingapore 2263singapore. |
| 中文摘要 | growth interruption-induced microroughness is studied by photoluminescence (pl) of single quantum wells with different well widths and interruption times. analysis of the peak splitting in the pl spectra shows that the adjacent peak splittings correspond to well width differences smaller than one monolayer. the number of split peaks increases with increasing well width, saturating when the well width exceeds 11 monolayers. this trend correlates well with the decrease in the lateral dimension of the exciton, which corresponds roughly to the minimum optically sampled area of the interface. for a given quantum well, a plot of the normalized integrated intensities of the split pl peaks versus the well width fluctuation is well described by a gaussian distribution with an average fluctuation smaller than one monolayer. these results are consistent with the microroughness model. |
| 英文摘要 | growth interruption-induced microroughness is studied by photoluminescence (pl) of single quantum wells with different well widths and interruption times. analysis of the peak splitting in the pl spectra shows that the adjacent peak splittings correspond to well width differences smaller than one monolayer. the number of split peaks increases with increasing well width, saturating when the well width exceeds 11 monolayers. this trend correlates well with the decrease in the lateral dimension of the exciton, which corresponds roughly to the minimum optically sampled area of the interface. for a given quantum well, a plot of the normalized integrated intensities of the split pl peaks versus the well width fluctuation is well described by a gaussian distribution with an average fluctuation smaller than one monolayer. these results are consistent with the microroughness model.; 于2010-11-17批量导入; zhangdi于2010-11-17 14:17:05导入数据到semi-ir的ir; made available in dspace on 2010-11-17t06:17:05z (gmt). no. of bitstreams: 1 7080.pdf: 290182 bytes, checksum: 6bf01496a86f00dbff9db7d4f0405e58 (md5) previous issue date: 1995; acad sinica,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15491]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LUO CP,CHIN MK,YUAN Z,et al. GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS[J]. journal of crystal growth,1995,155(0):272-275. |
| APA | LUO CP,CHIN MK,YUAN Z,XU ZY,YANG XP,&ZHANG PH.(1995).GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS.journal of crystal growth,155(0),272-275. |
| MLA | LUO CP,et al."GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS".journal of crystal growth 155.0(1995):272-275. |
入库方式： OAI收割
来源：半导体研究所
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