PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
文献类型：期刊论文
| 作者 | DONG JR ; WANG ZG ; LIU XL ; LU DC ; WANG D ; WANG XH |
| 刊名 | applied physics letters
 |
| 出版日期 | 1995 |
| 卷号 | 67期号:11页码:1573-1575 |
| 关键词 | DEPOSITION RECOMBINATION GA0.52IN0.48P SPECTROSCOPY TEMPERATURE EXCITATION SPECTRUM GAINP |
| ISSN号 | 0003-6951 |
| 通讯作者 | dong jr acad sinicainst semicondsemicond mat sci labpob 912beijing 100083peoples r china. |
| 中文摘要 | optical properties of ordered ga0.5in0.5p epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (pl) in a temperature range of 10-200 k using excitation power densities between 0.35 w/cm(2) and 20 w/cm(2). it is found that the intensity of the highest-energy pl peak of the ordered ga0.5in0.5p epilayer decreases first, then increases and finally goes down again with increasing temperature. a model of ordered ga0.5in0.5p epitaxial layers is proposed, in which the ordered ga0.5in0.5p epilayer is regarded as a type-ii quantum well structure with band-tail states, and the dependence of pl spectra on the temperature and excitation intensity is reasonably explained. (c) 1995 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15509]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | DONG JR,WANG ZG,LIU XL,et al. PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY[J]. applied physics letters,1995,67(11):1573-1575. |
| APA | DONG JR,WANG ZG,LIU XL,LU DC,WANG D,&WANG XH.(1995).PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY.applied physics letters,67(11),1573-1575. |
| MLA | DONG JR,et al."PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY".applied physics letters 67.11(1995):1573-1575. |
入库方式： OAI收割
来源：半导体研究所
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