INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES
文献类型：期刊论文
| 作者 | CUI SF ; WANG YT ; ZHUANG Y ; LI M ; MAI ZH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1995 |
| 卷号 | 152期号:4页码:354-358 |
| 关键词 | STRAIN RELAXATION HETEROEPITAXIAL LAYERS DEVICE STRUCTURES ROCKING CURVES SUPERLATTICES DIFFRACTION HETEROSTRUCTURES MISFIT |
| ISSN号 | 0022-0248 |
| 通讯作者 | cui sf chinese acad sciinst physbeijing 100080peoples r china. |
| 中文摘要 | a new approach for in-plane x-ray scattering from the cleavages of epitaxial films or superlattices, where the scattering vectors are parallel to the interfaces, is proposed. this method can be employed to determine directly the in-plane x-ray strains and other atomic registry along the interfaces of the epitaxial structures. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15525]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | CUI SF,WANG YT,ZHUANG Y,et al. INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES[J]. journal of crystal growth,1995,152(4):354-358. |
| APA | CUI SF,WANG YT,ZHUANG Y,LI M,&MAI ZH.(1995).INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES.journal of crystal growth,152(4),354-358. |
| MLA | CUI SF,et al."INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES".journal of crystal growth 152.4(1995):354-358. |
入库方式： OAI收割
来源：半导体研究所
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