CHARACTERISTICS OF OXIDES FORMED FROM A SI0.5GE0.5
文献类型：期刊论文
| 作者 | XING YR ; WU JA ; YIN SD |
| 刊名 | surface science
 |
| 出版日期 | 1995 |
| 卷号 | 334期号:0页码:l705-l708 |
| 关键词 | ALLOYS AUGER ELECTRON SPECTROSCOPY OXIDATION PHOTOELECTRON EMISSION SEMICONDUCTOR-INSULATOR INTERFACES SILICON OXIDES SILICON-GERMANIUM X-RAY PHOTOELECTRON SPECTROSCOPY OXIDATION GERMANIUM SIGE |
| ISSN号 | 0039-6028 |
| 通讯作者 | xing yr chinese acad sciinst semicondpob 912beijing 100083peoples r china. |
| 中文摘要 | x-ray photoelectron spectroscopy (xps) combined with auger electron spectroscopy (aes) have been used to study the oxides from a si0.5ge0.5 alloy grown by molecular beam epitaxy (mbe). the oxidation was performed at 1000 degrees c wet atmosphere. the oxide consists of two layers: a mixed (si,ge)o-x layer near the surface and a pure siox layer underneath. ge is rejected from the pure siox and piles up at the siox/sige interface. xps analysis demonstrates that the chemical shifts of si 2p and ge 3d in the oxidized si0.5ge0.5 are significantly larger than those in sio2 and geo2 formed from pure si and ge crystals. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15529]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | XING YR,WU JA,YIN SD. CHARACTERISTICS OF OXIDES FORMED FROM A SI0.5GE0.5[J]. surface science,1995,334(0):l705-l708. |
| APA | XING YR,WU JA,&YIN SD.(1995).CHARACTERISTICS OF OXIDES FORMED FROM A SI0.5GE0.5.surface science,334(0),l705-l708. |
| MLA | XING YR,et al."CHARACTERISTICS OF OXIDES FORMED FROM A SI0.5GE0.5".surface science 334.0(1995):l705-l708. |
入库方式： OAI收割
来源：半导体研究所
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