ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING
文献类型：期刊论文
| 作者 | CHOI WJ ; LEE S ; ZHANG JM ; KIM Y ; KIM SK ; LEE JI ; KANG KN ; CHO K |
| 刊名 | japanese journal of applied physics part 2-letters
 |
| 出版日期 | 1995 |
| 卷号 | 34期号:4a页码:l418-l421 |
| 关键词 | DIELECTRIC CAP QUANTUM WELL DISORDERING GAAS/ALGAAS MULTIPLE QUANTUM WELL SILICON NITRIDE PECVD VACANCY DIFFUSION OUT-DIFFUSION WAVE-GUIDE LASERS GAAS FILMS |
| ISSN号 | 0021-4922 |
| 通讯作者 | choi wj korea inst sci & technol div electr & informat technol cheongryang pob 131 seoul 130650 south korea. |
| 中文摘要 | quantum well disordering of gaas/algaas multiple quantum well(mqw) has been accomplished with only plasma enhanced chemical vapor deposited (pecvd) sin cap layer growth. the amount of blue shift increases with sin growing time. this result has been explained by the vacancy indiffusion during pecvd sin growth. rapid thermal annealing (rta) of the sample after sin cap layer growth at 850 degrees c for 35 s caused a larger amount of blue shift than those obtained without rta. by considering the model of al diffusion from algaas barrier into gaas qws together with the result from photoluminescence (pl) measurement, al diffusion coefficients were calculated. the al diffusion coefficient due to pecvd sin was estimated at about 3 x10(-17) cm(2)/s. it was possible to extract the effect of rta on the qw disordering, which showed that the amount of the blue shift and the al diffusion coefficient due only to rta increases with sin cap layer thickness as reported by chi et al.(10)) |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15547]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | CHOI WJ,LEE S,ZHANG JM,et al. ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING[J]. japanese journal of applied physics part 2-letters,1995,34(4a):l418-l421. |
| APA | CHOI WJ.,LEE S.,ZHANG JM.,KIM Y.,KIM SK.,...&CHO K.(1995).ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING.japanese journal of applied physics part 2-letters,34(4a),l418-l421. |
| MLA | CHOI WJ,et al."ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING".japanese journal of applied physics part 2-letters 34.4a(1995):l418-l421. |
入库方式： OAI收割
来源：半导体研究所
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