HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS
文献类型：期刊论文
| 作者 | LI GH ; GONI AR ; SYASSEN K ; BRANDT O ; PLOOG K |
| 刊名 | journal of physics and chemistry of solids
 |
| 出版日期 | 1995 |
| 卷号 | 56期号:0页码:385-388 |
| 关键词 | NANOSTRUCTURES SEMICONDUCTORS HIGH PRESSURE LUMINESCENCE HYDROSTATIC-PRESSURE ELECTRONIC-STRUCTURE GAAS MATRIX SUPERLATTICES TRANSITION EXCITONS |
| ISSN号 | 0022-3697 |
| 通讯作者 | li gh max planck inst festkorperforschheisenbergstr 1d-70569 stuttgartgermany. |
| 中文摘要 | we have measured low-temperature photoluminescence spectra of inas quantum dots embedded in a gaas crystalline matrix under hydrostatic pressures up to 7 gpa. below 4.2 gpa the spectra are dominated by the gamma-like electron-heavy hole (hh) exciton transition in the inas dots. above 4.2 gpa the spectra show two x-related luminescence bands which are attributed to the indirect type-i transition between x(xy) and hh states of the dots and the type-ii transition from x states in gaas to inas hh states, respectively. in the gamma-x crossover regime we find evidence for a pronounced mixing interaction between inas gamma-like and gaas x-like states. the corresponding interaction potential is estimated to be 9 mev. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15573]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LI GH,GONI AR,SYASSEN K,et al. HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS[J]. journal of physics and chemistry of solids,1995,56(0):385-388. |
| APA | LI GH,GONI AR,SYASSEN K,BRANDT O,&PLOOG K.(1995).HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS.journal of physics and chemistry of solids,56(0),385-388. |
| MLA | LI GH,et al."HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS".journal of physics and chemistry of solids 56.0(1995):385-388. |
入库方式： OAI收割
来源：半导体研究所
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