A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS
文献类型：期刊论文
| 作者 | JIANG DS ; WANG ZP ; ABRAHAM C ; SYASSEN K ; ZHANG YH ; PLOOG K |
| 刊名 | journal of physics and chemistry of solids
 |
| 出版日期 | 1995 |
| 卷号 | 56期号:0页码:397-401 |
| 关键词 | QUANTUM WELLS HIGH PRESSURE RAMAN SPECTROSCOPY PHONONS ABSORPTION-SPECTROSCOPY HETEROSTRUCTURES SCATTERING |
| ISSN号 | 0022-3697 |
| 通讯作者 | jiang ds chinese acad sciinst semicondnatl lab superlattices & microstructpob 912beijing 100083peoples r china. |
| 中文摘要 | the lo phonon modes in the barrier layers of a gainas/alinas multiple quantum well structure are investigated by resonance raman scattering (rrs), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. the resonance enhancement of lo phonon peaks are shown to be caused by frohlich electron-phonon interaction. the pressure-dependent profiles for both alas-like (lo(2) mode) and inas-like (lo(1) mode) raman peak intensities are well fitted by the gaussian lineshape. the shift between these two profiles can be explained by the outgoing rrs mechanism, providing information on the pressure-induced shift of the excitonic transition energy. the amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for al-as and in-as bonds in alinas alloy. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15577]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | JIANG DS,WANG ZP,ABRAHAM C,et al. A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS[J]. journal of physics and chemistry of solids,1995,56(0):397-401. |
| APA | JIANG DS,WANG ZP,ABRAHAM C,SYASSEN K,ZHANG YH,&PLOOG K.(1995).A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS.journal of physics and chemistry of solids,56(0),397-401. |
| MLA | JIANG DS,et al."A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS".journal of physics and chemistry of solids 56.0(1995):397-401. |
入库方式： OAI收割
来源：半导体研究所
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