COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING
文献类型：期刊论文
| 作者 | WANG QY ; ZAN YD ; WANG JH ; YU YH |
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 1995 |
| 卷号 | 29期号:0页码:43-46 |
| 关键词 | SILICON ON SAPPHIRE RAPID THERMAL ANNEALING SOLID PHASE EPITAXY |
| ISSN号 | 0921-5107 |
| 中文摘要 | chemically vapour deposited silicon on sapphire (sos) films 0.25 mu m thick were implanted with si-28(+) and recrystallized in solid phase by furnace annealing (fa) and ir rapid thermal annealing (rta) in our laboratory. an improvement in crystalline quality can be obtained using both annealing procedures. after fa, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) ohm cm) observed in as-grown sos films, so the improvement process cannot be put to practical use effectively. however, it is demonstrated that by properly adjusting the implantation and rta conditions, significant improvements in both film quality and film autodoping can be accomplished. this work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown sos films are retained. the mechanism of suppression of al autodoping is discussed. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15599]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | WANG QY,ZAN YD,WANG JH,et al. COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING[J]. materials science and engineering b-solid state materials for advanced technology,1995,29(0):43-46. |
| APA | WANG QY,ZAN YD,WANG JH,&YU YH.(1995).COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING.materials science and engineering b-solid state materials for advanced technology,29(0),43-46. |
| MLA | WANG QY,et al."COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING".materials science and engineering b-solid state materials for advanced technology 29.0(1995):43-46. |
入库方式： OAI收割
来源：半导体研究所
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