1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
文献类型:期刊论文
作者 | Huang Beiju![]() ![]() |
刊名 | 半导体学报
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出版日期 | 2009 |
卷号 | 30期号:10页码:81-85 |
中文摘要 | a zero-pole cancellation transimpedance amplifier (tia) has been realized in 0.35 μm rf cmos tech nology for gigabit ethernet applications. the tia exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. simulation results show that the proposed tia has a bandwidth of 1.9 ghz and a transimpedance gain of 65 db·ω for 1.5 pf photodiode capaci tance, with a gain-bandwidth product of 3.4 thz·ω. even with 2 pf photodiode capacitance, the bandwidth exhibits a decline of only 300 mhz, confirming the mechanism of the zero-pole cancellation configuration. the input resis tance is 50 ω, and the average input noise current spectral density is 9.7 pa/(hz)~(1/2). testing results shows that the eye diagram at 1 gb/s is wide open. the chip dissipates 17 mw under a single 3.3 v supply. |
学科主题 | 光电子学 |
收录类别 | CSCD |
资助信息 | the national natural science foundation of china,the national high technology research and development program of china |
语种 | 英语 |
公开日期 | 2010-11-23 |
源URL | [http://ir.semi.ac.cn/handle/172111/15695] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Huang Beiju,Zhang Xu. 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications[J]. 半导体学报,2009,30(10):81-85. |
APA | Huang Beiju,&Zhang Xu.(2009).1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications.半导体学报,30(10),81-85. |
MLA | Huang Beiju,et al."1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications".半导体学报 30.10(2009):81-85. |
入库方式: OAI收割
来源:半导体研究所
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