中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

文献类型:期刊论文

作者Huang Beiju; Zhang Xu
刊名半导体学报
出版日期2009
卷号30期号:10页码:81-85
中文摘要a zero-pole cancellation transimpedance amplifier (tia) has been realized in 0.35 μm rf cmos tech nology for gigabit ethernet applications. the tia exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. simulation results show that the proposed tia has a bandwidth of 1.9 ghz and a transimpedance gain of 65 db·ω for 1.5 pf photodiode capaci tance, with a gain-bandwidth product of 3.4 thz·ω. even with 2 pf photodiode capacitance, the bandwidth exhibits a decline of only 300 mhz, confirming the mechanism of the zero-pole cancellation configuration. the input resis tance is 50 ω, and the average input noise current spectral density is 9.7 pa/(hz)~(1/2). testing results shows that the eye diagram at 1 gb/s is wide open. the chip dissipates 17 mw under a single 3.3 v supply.
学科主题光电子学
收录类别CSCD
资助信息the national natural science foundation of china,the national high technology research and development program of china
语种英语
公开日期2010-11-23
源URL[http://ir.semi.ac.cn/handle/172111/15695]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Huang Beiju,Zhang Xu. 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications[J]. 半导体学报,2009,30(10):81-85.
APA Huang Beiju,&Zhang Xu.(2009).1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications.半导体学报,30(10),81-85.
MLA Huang Beiju,et al."1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications".半导体学报 30.10(2009):81-85.

入库方式: OAI收割

来源:半导体研究所

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