Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures
文献类型：期刊论文
| 作者 | Zhang Yu
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:10页码:10-12 |
| 中文摘要 | the influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2deg) is investigated on ungated algan/gan heterostructures and algan/gan heterostructure field effect transistors (algan/gan hfets). current-voltage (i-v) characteristics for ungated algan/gan heterostructures and capacitance-voltage (c-v) characteristics for algan/gan hfets are obtained, and the electron mobility for the ungated algan/gan heterostructure is calculated. it is found that the electron mobility of the 2deg for the ungated algan/gan heterostructure is decreased by more than 50% compared with the electron mobility of hall measurements. we propose that defects are introduced into the algan barrier layer and the strain of the algan barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | the national natural science foundation of china,the state key development program for basic research of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15697]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Yu. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. 半导体学报,2009,30(10):10-12. |
| APA | Zhang Yu.(2009).Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures.半导体学报,30(10),10-12. |
| MLA | Zhang Yu."Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures".半导体学报 30.10(2009):10-12. |
入库方式： OAI收割
来源：半导体研究所
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