Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
文献类型：期刊论文
| 作者 | Zuo Yuhua ; Cheng Buwen
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:10页码:1-4 |
| 中文摘要 | er-doped silicon-rich silicon nitride (srn) films were deposited on silicon substrate by an rf magnetron reaction sputtering system. after high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to ~2h_(11/2) to the ground state of er~(3+) are observed. raman spectra and hrtem measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | the national natural science foundation of china,the state key development program for basic research of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15699]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zuo Yuhua,Cheng Buwen. Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films[J]. 半导体学报,2009,30(10):1-4. |
| APA | Zuo Yuhua,&Cheng Buwen.(2009).Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films.半导体学报,30(10),1-4. |
| MLA | Zuo Yuhua,et al."Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films".半导体学报 30.10(2009):1-4. |
入库方式： OAI收割
来源：半导体研究所
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