Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film
文献类型：期刊论文
| 作者 | Li Yan
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:9页码:151-154 |
| 中文摘要 | the influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (pecvd) silicon nitride thin film is studied. the deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of sin_x:h by hf solution. a low etch rate was achieved by increasing the sih_4 gas flow rate or annealing temperature, or decreasing the nh_3 and n_2 gas flow rate. concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for sio_2 and sin_x:h. a high etching selectivity of sio_2 over sin_x:h was obtained using highly concentrated buffered hf. |
| 英文摘要 | the influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (pecvd) silicon nitride thin film is studied. the deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of sin_x:h by hf solution. a low etch rate was achieved by increasing the sih_4 gas flow rate or annealing temperature, or decreasing the nh_3 and n_2 gas flow rate. concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for sio_2 and sin_x:h. a high etching selectivity of sio_2 over sin_x:h was obtained using highly concentrated buffered hf.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:53导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:53z (gmt). no. of bitstreams: 1 3662.pdf: 219266 bytes, checksum: aa9510f0e9e2171eeb09ca22f0567bd4 (md5) previous issue date: 2009; the national high technology research and development program of china,the state key development program for basic research of china,the hundred talents plan of chinese academy of sciences; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | the national high technology research and development program of china,the state key development program for basic research of china,the hundred talents plan of chinese academy of sciences |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15707]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li Yan. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film[J]. 半导体学报,2009,30(9):151-154. |
| APA | Li Yan.(2009).Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film.半导体学报,30(9),151-154. |
| MLA | Li Yan."Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film".半导体学报 30.9(2009):151-154. |
入库方式： OAI收割
来源：半导体研究所
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