Influence of a tilted cavity on quantum-dot optoelectronic active devices
文献类型：期刊论文
| 作者 | Xu Bo
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:9页码:37-40 |
| 中文摘要 | quantum-dot laser diodes (qd-lds) with a fabry-perot cavity and quantum-dot semiconductor optical amplifiers (qd-soas) with 7° tilted cavity were fabricated. the influence of a tilted cavity on optoelectronic active devices was also investigated. for the qd-ld, high performance was observed at room temperature. the threshold current was below 30 ma and the slope efficiency was 0.36 w/a. in contrast, the threshold current of the qd-soa approached 1000 ma, which indicated that low facet reflectivity was obtained due to the tilted cavity design.a much more inverted carrier population was found in the qd-soa active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the qd-soa was 81.6 nm at the injection current of 120 ma, which was ideal for broad bandwidth application in a wavelength division multiplexing system. in addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | the state key development program for basic research of china,the national natural science foundation of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15717]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu Bo. Influence of a tilted cavity on quantum-dot optoelectronic active devices[J]. 半导体学报,2009,30(9):37-40. |
| APA | Xu Bo.(2009).Influence of a tilted cavity on quantum-dot optoelectronic active devices.半导体学报,30(9),37-40. |
| MLA | Xu Bo."Influence of a tilted cavity on quantum-dot optoelectronic active devices".半导体学报 30.9(2009):37-40. |
入库方式： OAI收割
来源：半导体研究所
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