Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
文献类型：期刊论文
| 作者 | Chen Xiaofeng ; Chen Nuofu ; Wu Jinliang ; Zhang Xiulan ; Chai Chunlin ; Yu Yude |
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:8页码:47-51 |
| 中文摘要 | a gasb crystal incorporated with mn has been grown by the bridgman method on the polizon facility onboard the foton-m3 spacecraft. structural defects and growth striations have been successfully revealed by the chemical etching method. by calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. the stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. suggestions for improving the space experiment to improve the quality of the crystal are given. |
| 英文摘要 | a gasb crystal incorporated with mn has been grown by the bridgman method on the polizon facility onboard the foton-m3 spacecraft. structural defects and growth striations have been successfully revealed by the chemical etching method. by calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. the stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. suggestions for improving the space experiment to improve the quality of the crystal are given.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:56导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:56z (gmt). no. of bitstreams: 1 3671.pdf: 403106 bytes, checksum: cefb07d8f0361edbb769c89f4aec3048 (md5) previous issue date: 2009; the space agency of china and the chinese academy of sciences project; institute of semiconductors,chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | the space agency of china and the chinese academy of sciences project |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15725]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Xiaofeng,Chen Nuofu,Wu Jinliang,et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009,30(8):47-51. |
| APA | Chen Xiaofeng,Chen Nuofu,Wu Jinliang,Zhang Xiulan,Chai Chunlin,&Yu Yude.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报,30(8),47-51. |
| MLA | Chen Xiaofeng,et al."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 30.8(2009):47-51. |
入库方式： OAI收割
来源：半导体研究所
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