中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

文献类型:期刊论文

作者Peng Wenbo; Liu Shiyong
刊名半导体学报
出版日期2009
卷号30期号:8页码:39-42
中文摘要composites consisting of hydrogenated amorphous silicon (a-si: h, inorganic) and zinc phthalocyanine (znpc, organic) were prepared by vacuum evaporation of znpc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (pecvd). the optical and electrical properties of the composite film have been investigated. the results demonstrate that znpc can endure the temperature and bombardment of the pecvd plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-si: h film. electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/v. combined with photoconductivity spectra of the composites and pure a-si: h, we tentatively elucidate the improvement in photoconductivity of the composite film.
英文摘要composites consisting of hydrogenated amorphous silicon (a-si: h, inorganic) and zinc phthalocyanine (znpc, organic) were prepared by vacuum evaporation of znpc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (pecvd). the optical and electrical properties of the composite film have been investigated. the results demonstrate that znpc can endure the temperature and bombardment of the pecvd plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-si: h film. electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/v. combined with photoconductivity spectra of the composites and pure a-si: h, we tentatively elucidate the improvement in photoconductivity of the composite film.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:56导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:56z (gmt). no. of bitstreams: 1 3672.pdf: 275174 bytes, checksum: b23ddbe9e877e7639df3a7ce51129f1b (md5) previous issue date: 2009; the state key development program for basic research of china,the national natural science foundation of china,the national high technology research and development program of china; institute of semiconductors,chinese academy of sciences;institute of chemistry,chinese academy of sciences
学科主题半导体材料
收录类别CSCD
资助信息the state key development program for basic research of china,the national natural science foundation of china,the national high technology research and development program of china
语种英语
公开日期2010-11-23 ; 2011-04-28
源URL[http://ir.semi.ac.cn/handle/172111/15727]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Peng Wenbo,Liu Shiyong. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. 半导体学报,2009,30(8):39-42.
APA Peng Wenbo,&Liu Shiyong.(2009).Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon.半导体学报,30(8),39-42.
MLA Peng Wenbo,et al."Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon".半导体学报 30.8(2009):39-42.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。