Wet etching and infrared absorption of AlN bulk single crystals
文献类型：期刊论文
| 作者 | Ke Jianhong
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:7页码:27-30 |
| 中文摘要 | the defects and the lattice perfection of an aln (0001) single crystal grown by the physical vapor transport (pvt) method were investigated by wet etching, x-ray diffraction (xrd), and infrared absorption, respectively. a regular hexagonal etch pit density (epd) of about 4000 cm~(-2) is observed on the (0001) a1 surface of an aln single crystal. the epd exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. the xrd full width at half maximum (fwhm) of the single crystal is 35 arcsec, suggesting a good lattice perfection. pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. these absorptions might relate to impurities o, c, si and their complexes in aln single crystals. |
| 英文摘要 | the defects and the lattice perfection of an aln (0001) single crystal grown by the physical vapor transport (pvt) method were investigated by wet etching, x-ray diffraction (xrd), and infrared absorption, respectively. a regular hexagonal etch pit density (epd) of about 4000 cm~(-2) is observed on the (0001) a1 surface of an aln single crystal. the epd exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. the xrd full width at half maximum (fwhm) of the single crystal is 35 arcsec, suggesting a good lattice perfection. pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. these absorptions might relate to impurities o, c, si and their complexes in aln single crystals.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:58导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:58z (gmt). no. of bitstreams: 1 3679.pdf: 511704 bytes, checksum: cce19017a45513b37f61003cf6a18eae (md5) previous issue date: 2009; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15739]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ke Jianhong. Wet etching and infrared absorption of AlN bulk single crystals[J]. 半导体学报,2009,30(7):27-30. |
| APA | Ke Jianhong.(2009).Wet etching and infrared absorption of AlN bulk single crystals.半导体学报,30(7),27-30. |
| MLA | Ke Jianhong."Wet etching and infrared absorption of AlN bulk single crystals".半导体学报 30.7(2009):27-30. |
入库方式： OAI收割
来源：半导体研究所
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